Fully Automatic Wafer Laser Grooving / Full Cut Equipment

L1-7100 (nanoseconds) L1-7500 (picoseconds)

Fully Automatic Wafer Laser Grooving / Full Cut Equipment

Higher efficiency, better stability 8/12 inch compatible, supports nanosecond/picosecond Dual multi-beam parallel processing

Equipment Characteristics

Suitable for laser grooving of materials such as Low-k, aluminum nitride (AlN), alumina ceramics, etc.

Suitable for materials such as silicon and gallium arsenide (GaAs), thickness below 200μm thin wafers without chipping high-quality full cut.

8/12 inch compatible, supporting nanoseconds/picoseconds.

Dual multi-beam parallel processing.

Can achieve continuous adjustable groove width of 10-90 µm.

Processing ultra-narrow cutting path within 10μm Overall accuracy :<±1µm.

Performance Parameters

processing width

Compatible with 8-inch and 12-inch wafers (customizable), nanosecond/picosecond selectable support

Material thickness

≤1.6mm (depending on material)

minimum spot

8µm

Platform Repeatability

≤ ±0.7µm

Precision of the whole machine

<±1µm

Equipment Size

1550x2000x1985 (without tricolor light)

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